A complementary metal oxide semiconductor (CMOS) bandpass filter for cost-efficient radio frequency (RF) appliances
Abstract
A band pass filter is an inherent part of every radio frequency (RF) transceiver. The
usage of spiral inductors in band-pass filters cannot overcome limitations such as loss due to parasitic effects, large chip area, low quality factor, less tenability, etc. Therefore, this paper presents an active inductor based design of a second order bandpass filter in 0.18μm complementary metal oxide semiconductor (CMOS) technology for 2.4 GHz radio frequency (RF) applications. The centre frequency of the proposed
band pass filter can be adjusted from 1.86 GHz to 3.33 GHz with high Q factor of 250 at 2.45GHz. This filter dissipates only 3.407 mW at 1.5V supply voltage and occupies only 0.0014 mm2 chip area.
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