Sub-threshold Modeling of Dual-Halo Dual-Dielectric Triple-Material Surrounding-Gate (DH-DD-TM-SG) MOSFET for Improved Leakages
Abstract
This paper presents a model of Sub-threshold current and Sub-threshold swing model for Dual-Halo Dual-Dielectric Triple-Material Cylindrical Gate All Around/Surrounding Gate (DH-DD-TM-CGAA/SG) MOSFET for improved leakages. The virtual cathode method is used to derive the current in the sub-threshold regime. The model presented in this paper also incorporates the effect on sub-threshold characteristics of the device with variation in radius of silicon pillar and gate oxide thickness. The channel leakage current is a key metric to evaluate the capability of the device. The effectiveness of DH-DD-TM-CGAA MOSFET was observed by comparing with the conventional triple metal structures. Furthermore the consequence of variation in technology parameter is also studied. The outcomes of the proposed model depict that the cutback in sub-threshold channel leakage current as compared to existing triple metal structures. The analytical results show the excellent agreement with the simulated results.
References
Colinge, J.P., 2004. Muti -gate MOSFETs. Solid State Electron.48 ( 6): 897-905.
Sharma, A., Jain, A., Pratap, Y., & Gupta, R.S., 2016. Effect of high-k and vacuum dielectrics as gate stack on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET. Solid State Electronics. 123:26-32 .
Verma, J.H.K., Haldar, S., Gupta, R.S., & Gupta M., 2015. Modeling and simulation of subthreshold behavior of cylindrical surrounding double gate MOSFET for enhanced electrostatic integrity. Superlattices Microstructures. 88:354-364.
Wang, H.K., Chiang, T.K., & Lee, M. S., 2012. A new two dimensional analytical threshold voltage model for short channel triple material surrounding gate MOSFETs. Japanese Journal of Applied Physics. 51(5):1-5.
Vaddi, R., Agarwal, R.P., & Dasgupta, S., 2011. Analytical modeling of subthreshold current and subthreshold swing of an underlap DG MOSFET with tied-independent gate and symmetric-asymmetric options. Microelectronics Journal 42(1):798-807.
Liu, C.W., & Hsieh, T.X., 2000. Analytical modeling of the sub threshold behavior in MOSFET. Solid State Electronics. 44:1707-1710.
Liu, X., Lee, J.H., & Lee, H.O., 2010. A continuous current model of fully depleted symmetric double gate MOSFETs considering a wide range of doping concentrations. Journal of Semiconductors. 25(5).
Gautam, R., Saxsena, M., Gupta, R.S., & Gupta M., 2012. Effect of localized charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and Linearity analysis. Microelectronics Reliability. 52(6):989-994.
Tiwari, P.K., Dubey, S., Singh, K., & Jit, S., 2012. Analytical modeling of sub-threshold current and sub-threshold swing of short-channel triple-material double-gate MOSFETs. Superlattices Microstructures. 51:715-724.
Dhanaselvam, P.S., & Balamurugan, N.B., 2013. A 2D transconductance and sub-threshold behavior model for triple material surrounding gate MOSFETs. Microelectronics Journal. 44(12):1159-1164.
Lin, R., Lu,Q. ,Ranade, P., King, T.J. & Hu, C., 2002. An adjustable work function technology using Mo gate for CMOS devices. IEEE Electron Device Letters.( 23): 49-51.
Balamurugan, N.B., Sankaranarayanan, K., Amutha, P., & John, M.F., 2008. An Analytical Modeling of Threshold and Subthreshold Swing on Dual Material Surrounding Gate Nanoscale MOSFETs for high speed Wireless Communication. Journal of Semiconductor Technology and Science. 8(3): 221-226.
Ghosh,P., Haldar, S., Gupta, R.S., & Gupta, M.,2012. Analytical modeling and simulation for dual metal gate stack architecture cylindrical/surrounded gate MOSFET. Journal of Semiconductor Technology and Science. 12(4): 458-463.
Rewari, S., Haldar, S., Nath, V., Deswal, S.S., Gupta, R.S., 2015. Numerical modeling of subthreshold region of junctionless double surrounding gate MOSFET. Superlattices Microstructures. 90:8-19.
Xiao, Y., Zhang, B., Lou, H., Zhang, L., & Lin, X., 2016. A compact model of sub threshold current With source/drain depletion effect for the short-channel junctionless cylindrical surrounding-gate MOSFETs. IEEE Transactions on Electron Devices 63(5):2176-2181.
Gupta, N., Patel, J.K.B., & Raghav, A.K.,2018. Modeling and analysis of threshold voltage for Dual-Halo Dual-Dielectric Triple-Material Surrounding-Gate MOSFETs. International Journal of Pure and Applied Mathematics. 118(18): 3759-3771.
ATLAS Device Simulator SILVACO International, (2015)
Chiang, T.K., 2009. A new compact subthreshold behavior model for dual-material surrounding gate (DMSG) MOSFETs. Solid-State Electronics. 53: 490–496.
