Ion beam analysis for hall scattering factor measurements in antimony implanted bulk and strained silicon
Abstract
Rutherford back-scattering (RBS) and Medium Energy Ion Scattering (MEIS) have been used todetermine the lattice site occupancy of antimony (Sb) implanted into silicon (Si) and strainedsilicon (sSi) for ion energies of 2keV to 40keV. After annealing in the range 600-11000C forvarious times, Hall effect measurements were used to provide a measure of the percentageelectrical activity. A comparison of the lattice site occupancy with the percentage electricalactivity was used to confirm whether the assumption that the Hall scattering factor is equal tounity is valid. Our results demonstrate that for 40keV implants the electrical activation is about90%. In the case of 2keV implants the electrical activation is lower and in the range 10-80%,depending on the ion fluence and annealing conditions. This reduction in activation for lowerenergy implants is a result of inactive Sb close to the semiconductor/native-oxide interface, orabove concentrations of 4.5x1020cm-3. Tensile strain facilitates the lattice site occupancy andelectrical activation of Sb in Si by raising the doping ceiling. For both 40keV and 2keV implants,we have carried out a comparison of RBS/MEIS and Hall effect data to show that for Sbimplants into both bulk Si and strained Si the Hall scattering factor is equal to unity withinexperimental error.References
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